2003. 2. 17 1/2 semiconductor technical data MJE13003 triple diffused npn transistor revision no : 7 switching regulator application. high voltage and high speed switching application. features excellent switching times : t on =1.1 s(max.), t f =0.7 s(max.), at i c =1a high collector voltage : v cbo =700v. maximum rating (ta=25 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.1 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 14.0 min 2.3 0.1 0.75 0.15 1.6 3.4 max b 1 23 + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v collector current dc i c 1.5 a pulse i cp 3 base current i b 0.75 a collector power dissipation (tc=25 ) p c 20 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit emitter cut-off current i ebo v eb =9v, i c =0 - - 10 a dc current gain h fe (1) v ce =2v, i c =0.5a 8 - 40 h fe (2) v ce =2v, i c =1a 5 - 25 collector-emitter saturation voltage v ce(sat) i c =0.5a, i b =0.1a - - 0.5 v i c =1a, i b =0.25a - - 1 i c =1.5a, i b =0.5a - - 3 base-emitter saturation voltage v be(sat) i c =0.5a, i b =0.1a - - 1 v i c =1a, i b =0.25a - - 1.2 collector output capacitance c ob v cb =10v, f=0.1mhz, i e =0 - 21 - pf transition frequency f t v ce =10v, i c =0.1a 4 - - mhz turn-on time t on i b1 125? b1 i cc v =125v i b2 i b2 300 s i =i =0.2a 2% b1 b2 output duty cycle input < = - - 1.1 s storage time t stg - - 4.0 s fall time t f - - 0.7 s
2003. 2. 17 2/2 MJE13003 revision no : 7 power dissipation p (w) 0 c 0 ambient temperature ta ( c) c p - ta base-emitter voltage be(sat) 0.4 0.01 collector current i (a) c v - i dc current gain c collector current i (a) 0.01 fe dc current gain h 1 collector-emitter saturation 0.01 ce(sat) 0 collector current i (a) c v - i switching time ( s) 0.01 collector current i (a) 0.1 c 0.1 switching characteristic 0.03 0.1 0.3 1 2 3 5 10 30 50 100 common emitter v =2v ce t =150 c j t =25 c j t =-55 c j be(sat) c v (v) 0.6 0.8 1 1.2 1.4 0.03 0.1 0.3 1 2 v @i /i =3 be(sat) c b v @v =2v be(on) ce t =-55 c j t =25 c j t =25 c j t =150 c j ce(sat) c voltage v (v) 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.03 0.1 0.3 1 2 common emitter i /i =3 c b t =150 c j t =25 c j t =-55 c j collector current i (a) collector emitter voltage v (v) 1 ce 0.01 c safe operating area 0.03 0.3 1 2 0.3 0.5 1 3 5 10 v =125v i /i =5 cc c b t stg f t 50 100 150 200 5 10 15 20 25 310 301003001 k 0.1 0.03 0.3 1 3 10 i max.(pulsed) c (dc) single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature 10 s 100 s 1ms 5ms * * * * * *
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